Location: Albany, NY Category: Academic Posted On: Mon Sep 13 2021 Job Description:
Job responsibilities include, but are not limited to:
The position is seeking a highly motivated postdoctoral fellow to perform collaborative research on optoelectronic devices based on III-Nitride semiconductors. Specifically, the research involves the epitaxial growth (including selective area epitaxy) of GaN and InGaN-based MQW by MOCVD, materials characterization, and fabrication of light emitting devices.
The successful candidate will be expected to be self-motivated, strong team-player, current with the literature in the field of III-Nitrides optoelectronic growth and devices, will be responsible for planning and conducting experiments, for interpreting data, creating and presenting reports, and for publishing of research results.
Other reasonable duties as assigned.
Applicants must possess a doctoral degree in physics, engineering (materials, chemical, electrical) or related discipline with research experience in III-Nitride materials (or expect to complete a PhD prior to the start of the postdoctoral position). A solid background in III-Nitride epitaxial growth by MOCVD, and a variety of associated materials characterizations is required.
Candidates must address in their applications their ability to work with culturally diverse populations. This position is contingent on the satisfactory completion of a background check; this position may require annual background checks.
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